Home > SCRs >

High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current

Description : SCRs RoHS

Mfr. Part # : T4M35T600B

Model Number : T4M35T600B

Contact Now

Product Overview

The T4M35T600B(LS) is a Triac, a silicon bidirectional thyristor designed for high-power switching applications. It offers a blocking voltage of up to 600V and an on-state current rating of 4.0 Amperes RMS at +100C. Key features include high immunity to dv/dt, high surge current capability, and operational in three quadrants (Q1, Q2, and Q3). This device minimizes the need for snubber networks, simplifying circuit design. It is RoHS compliant and a "Green" device, indicating it is Halogen and Antimony free.

Product Attributes

Brand: Diodes Incorporated
Product Type: Triacs / Silicon Bidirectional Thyristors
Material: Molded Plastic, "Green" Molding Compound
Color: "Green" Device
Certifications: RoHS Compliant, Halogen and Antimony Free

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Peak repetitive off-state voltage	VDRM / VRRM	600	Volts	TJ = -40 to +125C, sine wave, 50 to 60Hz; gate open
Peak repetitive off-state voltage	VDRM / VRRM	600	Volts
On-stage RMS current	IT(RMS)	4.0	Amperes	full sine wave 50 to 60Hz, TC = +100C
Peak non-repetitive surge current	ITSM	40	Amps	one full cycle 60Hz, TJ = +25C
Circuit fusing consideration	I2t	6.6	A2s	t = 8.3ms
Operating junction temperature range	TJ	-40 to +125	C
Storage temperature range	TSTG	-40 to +150	C
Peak repetitive forward or reverse blocking current	IDRM / IRRM	0.01 / 2.0	mA	VAK = rated VDRM and VRRM, gate open; TJ = +25C / +125C
Peak forward on-state voltage	VTM	1.6	Volts	ITM = 4A @ tP 2.0ms, duty cycle 2%
Gate trigger current	IGT1 / IGT2 / IGT3	35	mA	VD = 12V, RL = 100
Gate trigger voltage	VGT1 / VGT2 / VGT3	1.3	Volts	VD = 12V, RL = 100
Holding current	IH	35	mA	VD = 12V, initiation current = 200mA, gate open
Latching current	IL1 / IL2 / IL3	60 / 80 / 60	mA	VD = 12V, IG = 35mA
Critical rate of rise of Commutation voltage	dv/dt	500	V/s	VD = 67% rated VDRM, exponential waveform, gate open; TJ = +125C

2412251013_DIODES-T4M35T600B_C17640522.pdf

High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!