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TO247 package AOS AOK30B120D2 Alpha IGBT featuring fast turn off times and smooth current waveforms

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TO247 package AOS AOK30B120D2 Alpha IGBT featuring fast turn off times and smooth current waveforms

Td(off) : 115ns

Pd - Power Dissipation : -

Td(on) : -

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

IGBT Type : -

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : -

Gate Charge(Qg) : 67nC

Operating Temperature : -55℃~+175℃@(Tj)

Switching Energy(Eoff) : 1.28mJ

Turn-On Energy (Eon) : -

Description : 1.2kV TO-247 Single IGBTs RoHS

Mfr. Part # : AOK30B120D2

Model Number : AOK30B120D2

Package : TO-247

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Product Overview

The AOK30B120D2 is an Alpha IGBT with an integrated diode, designed for high-performance applications. It leverages the latest AlphaIGBT ( IGBT) technology, offering low turn-off switching loss due to fast turn-off times and very smooth turn-off current waveforms that reduce EMI. This device provides better thermal management and high surge current capability, with minimal gate spike due to high input capacitance. It is suitable for applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications. This product has been designed and qualified for the consumer market.

Product Attributes

Brand: Alpha
Technology: AlphaIGBT ( IGBT)
Package Type: TO247
Minimum Order Quantity: 240
Revision: 1.0
Date: December 2014

Technical Specifications

Parameter	Conditions	Symbol	Min	Typ	Max	Units
Product Summary
Collector-Emitter Voltage		V CE			1200	V
Continuous Collector Current	TC=100C	I C			30	A
Collector-Emitter Saturation Voltage	TC=25C	V CE(sat)		1.77	2.2	V
Diode Pulsed Current, Limited by TJmax		I Fpulse			300	A
Pulsed Collector Current, Limited by TJmax		I CSM			200	A
Diode Forward Current	TC=25C	I F			60	A
Continuous Collector Current	TC=25C	I C			60	A
Power Dissipation	TC=25C	P D			340	W
Junction and Storage Temperature Range		T J , T STG	-55		175	C
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds		T L			300	C
Thermal Characteristics
Maximum IGBT Junction-to-Case	TC=100C	R q JC		0.44		C/W
Maximum Diode Junction-to-Case		R q JC		1.20		C/W
Maximum Junction-to-Ambient		R q JA		40		C/W
Electrical Characteristics
Collector-Emitter Breakdown Voltage	TJ=25C	BV CES	1200	-	-	V
Gate-Emitter Threshold Voltage	TJ=25C	V GE(th)	-	1.5	1.8	V
Zero Gate Voltage Collector Current	VCE=1200V, VGE=0V	I CES	-	-	10	nA
	VGE=0V, IC=30A	I CES	-	-	100	A
Diode Forward Voltage	VCE=5V, IC=1mA	V F	-	-	2.2	V
	TJ=25C	V F	-	1.77	-	V
	TJ=125C	V F	-	1.6	-	V
	TJ=175C	V F	-	1.62	-	V
Collector-Emitter Saturation Voltage	VGE=15V, IC=30A	V CE(sat)	-	1.77	2.2	V
	TJ=25C	V CE(sat)	-	1.77	-	V
	TJ=125C	V CE(sat)	-	2.2	-	V
	TJ=175C	V CE(sat)	-	2.43	-	V
Forward Transconductance	VCE=20V, IC=30A	g FS	-	28	-	S
Input Capacitance	VGE=0V, VCE=25V, f=1MHz	C ies	-	1900	-	pF
Output Capacitance	VGE=0V, VCE=25V, f=1MHz	C oes	-	109	-	pF
Reverse Transfer Capacitance	VGE=0V, VCE=25V, f=1MHz	C res	-	32	-	pF
Total Gate Charge	VGE=15V, IC=30A	Q g	-	67	-	nC
Gate to Emitter Charge	VGE=15V, IC=30A	Q ge	-	16	-	nC
Gate to Collector Charge	VGE=15V, IC=30A	Q gc	-	32	-	nC
Switching Parameters (Load Inductive, TJ=25C)
Turn-Off Delay Time	VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH	t D(off)	-	115	-	ns
Turn-Off Fall Time	VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH	t f	-	130	-	ns
Turn-Off Energy	VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH	E off	-	1.28	-	mJ
Switching Parameters (Load Inductive, TJ=175C)
Turn-Off Delay Time	VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH	t D(off)	-	140	-	ns
Turn-Off Fall Time	VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH	t f	-	200	-	ns
Turn-Off Energy	VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH	E off	-	2.15	-	mJ

2504101957_AOS-AOK30B120D2_C17659196.pdf

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