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Nexperia PDTA114YT 215 PNP Resistor Equipped Transistor in Surface Mounted Package for Load Switching

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Nexperia PDTA114YT 215 PNP Resistor Equipped Transistor in Surface Mounted Package for Load Switching

Input Resistor : 10kΩ

Resistor Ratio : 4.7

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 250mW Surface Mount SOT-23

Mfr. Part # : PDTA114YT,215

Model Number : PDTA114YT,215

Package : SOT-23

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Nexperia PDTA114Y Series PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PDTA114Y series comprises PNP Resistor-Equipped Transistors (RETs) in compact Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 10 k, R2 = 47 k), which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. These devices offer a cost-saving alternative to BC847/857 series in digital applications, control of IC inputs, and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Certifications: AEC-Q101 qualified
  • Built-in Resistors: R1 = 10 k, R2 = 47 k

Technical Specifications

Type Number Package NPN Complement Package Configuration Output Current (IO) Min/Typ/Max R1 Bias Resistor (Input) Min/Typ/Max R2/R1 Bias Resistor Ratio Min/Typ/Max Collector-Emitter Voltage (VCEO) Min/Typ/Max
PDTA114YE SOT416 (SC-75) PDTC114YE ultra small - / - / -100 mA 7 k / 10 k / 13 k 3.7 / 4.7 / 5.7 - / - / -50 V
PDTA114YM SOT883 (SC-101) PDTC114YM leadless ultra small - / - / -100 mA 7 k / 10 k / 13 k 3.7 / 4.7 / 5.7 - / - / -50 V
PDTA114YT SOT23 (TO-236AB) PDTC114YT small - / - / -100 mA 7 k / 10 k / 13 k 3.7 / 4.7 / 5.7 - / - / -50 V
PDTA114YU SOT323 (SC-70) PDTC114YU very small - / - / -100 mA 7 k / 10 k / 13 k 3.7 / 4.7 / 5.7 - / - / -50 V

Features and Benefits

  • 100 mA output current capability
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • AEC-Q101 qualified

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC847/857 series in digital applications
  • Control of IC inputs
  • Switching loads

Marking Codes

Type Number Marking Code
PDTA114YE 36
PDTA114YM DF
PDTA114YT *29
PDTA114YU *55

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage open emitter - -50 V
VCEO Collector-emitter voltage open base - -50 V
VEBO Emitter-base voltage open collector - -6 V
VI Input voltage positive - +6 V
VI Input voltage negative - -40 V
IO Output current - - -100 mA
ICM Peak collector current single pulse; tp 1 ms - -100 mA
Ptot Total power dissipation Tamb 25 C, PDTA114YE (SOT416) [1][2] - 150 mW
Tamb 25 C, PDTA114YM (SOT883) [2][3] - 250 mW
Tamb 25 C, PDTA114YT (SOT23) [1] - 250 mW
Tamb 25 C, PDTA114YU (SOT323) [1] - 200 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -65 +150 C
Tstg Storage temperature - -65 +150 C

Thermal Characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) Thermal resistance from junction to ambient PDTA114YE (SOT416) [1][2] - - 830 K/W
PDTA114YM (SOT883) [2][3] - - 500 K/W
PDTA114YT (SOT23) [1] - - 500 K/W
PDTA114YU (SOT323) [1] - - 625 K/W

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A - - -1 A
VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -150 A
hFE DC current gain VCE = -5 V; IC = -5 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = -5 mA; IB = -0.25 mA - - -100 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A - -0.7 -0.5 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -1 mA -1.4 -0.8 - V
R1 Bias resistor 1 (input) - 7 10 13 k
R2/R1 Bias resistor ratio - 3.7 4.7 5.7 -
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

2410121814_Nexperia-PDTA114YT-215_C513115.pdf


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