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Nexperia PUMH1 115 NPN Double Transistor with Bias Resistors in Compact SOT363 Surface Mount Package

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Nexperia PUMH1 115 NPN Double Transistor with Bias Resistors in Compact SOT363 Surface Mount Package

Output Voltage(VO(on)) : -

Input Resistor : 22kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363)

Mfr. Part # : PUMH1,115

Model Number : PUMH1,115

Package : TSSOP-6(SOT-363)

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Product Overview

PUMH1 is an NPN/NPN resistor-equipped double transistor (RET) housed in a compact SOT363 (SC-88) surface-mounted plastic package. It offers a 100 mA output current capability and features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

Brand: Nexperia
Product Type: NPN/NPN Resistor-Equipped Double Transistor
Package Type: SOT363 (SC-88)
Resistor Values: R1 = 22 k, R2 = 22 k

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor
VCEO	Collector-emitter voltage	Open base	-	-	50	V
IO	Output current	-	-	-	100	mA
R1	Bias resistor 1 (input)	[1]	15.4	22	28.6	k
R2/R1	Bias resistor ratio	Tamb = 25 C [1]	0.8	1	1.2	-
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VEBO	Emitter-base voltage	Open collector	-	-	10	V
VI	Input voltage	Positive	-	-	40	V
VI	Input voltage	Negative	-	-10	-	V
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	200	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-55	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Per device
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	300	mW
Thermal characteristics
Rth(j-a)	Thermal resistance junction to ambient	In free air [1]	-	-	625	K/W
Rth(j-a)	Thermal resistance junction to ambient	Per device [1]	-	-	417	K/W
Characteristics
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C	50	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	Tamb = 25 C	50	-	-	V
V(BR)EBO	Emitter-base breakdown voltage	IC = 0 A; IE = 100 A; Tamb = 25 C	10	-	-	V
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A; Tamb = 25 C	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tamb = 25 C	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tamb = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A; Tamb = 25 C	-	-	180	A
hFE	DC current gain	VCE = 5 V; IC = 5 mA; Tamb = 25 C	60	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA; Tamb = 25 C	-	-	150	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A; Tamb = 25 C	-	0.8	1.1	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 5 mA; Tamb = 25 C	1.7	2.5	-	V
R1	Bias resistor 1 (input)	[1]	15.4	22	28.6	k
R2/R1	Bias resistor ratio	Tamb = 25 C [1]	0.8	1	1.2	-
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 C	-	-	2.5	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2]	-	230	-	MHz
Package Outline (SOT363)
Body dimensions	-	-	2.1 x 1.25 x 0.95	-	-	mm
Pitch	-	-	0.65	-	-	mm

2410121948_Nexperia-PUMH1-115_C553527.pdf

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