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Single phase high voltage IPM LINKOSEMI LKS1D5007DT optimized for BLDC and PMSM motor control circuits

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Single phase high voltage IPM LINKOSEMI LKS1D5007DT optimized for BLDC and PMSM motor control circuits

High-side Bias Voltage(Vbs) : 12V~18V

Operating temperature : -40℃~+150℃

Voltage - Isolation : -

Frequency - Switching : 20kHz

Description : 20kHz ESOP-13 Power Driver Modules RoHS

Mfr. Part # : LKS1D5007DT

Model Number : LKS1D5007DT

Package : ESOP-13

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Product Overview

LKS1D5007DT is a high-voltage single-phase IPM (Intelligent Power Module) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The source of the low-side MOSFET can be used for current sampling. The input includes a Schmitt trigger and is compatible with 3.3V/5V/15V logic levels. The LKS1D5007DT utilizes an ESOP13 package.

Product Attributes

  • Brand: LKS (implied by www.lksmcu.com)
  • Origin: China (implied by www.bpsemi.com and the document language)
  • Package: ESOP13

Technical Specifications

ParameterConditionMinTypicalMaxUnitNotes
Absolute Maximum Ratings (Note 1) (Unless otherwise specified, TA=25)
VCCControl side supply voltage (VCC and COM terminals)20V
VBSHigh side bias voltage (VB and VS terminals)20V
VINInput signal voltage (VIN and COM terminals)-0.3VCC+0.3V
Inverter Section
VDSSMOSFET Drain-Source Voltage (IDSS=250uA)500V
IDMOSFET Continuous Operating Current (Note 2)7ATC=25
IDMOSFET Continuous Operating Current (Note 2)TBDATC=100
PDMaximum Power Dissipation (Single MOSFET, TC=100)TBDW
Control Section
VIN(ON)Input Turn-on Voltage Threshold (VIN and COM terminals)3.0VCCV
VIN(OFF)Input Turn-off Voltage Threshold (VIN and COM terminals)00.4V
Recommended Operating Conditions (Note 3) (Unless otherwise specified, TA=25)
VPNPower Section Supply Voltage (Between PN terminals)300400V
VCCControl Section Supply Voltage (VCC and COM terminals)12.015.018.0V
VBSHigh Side Bias Voltage (VB and VS terminals)12.015.018.0V
TDEADDead Time to Prevent Bridge Arm Shoot-through (Note 4)1.0--usVCC = VBS = 12.0 ~ 18.0V, TJ <150C
FPWMPWM Switching Frequency-20-KHzTJ <150C
Electrical Characteristics (Note 5) (Unless otherwise specified, TA=25)
BVDSSMOSFET Drain-Source Breakdown Voltage (VIN = 0 V, ID = 250 uA)500V
IDSSMOSFET Cut-off Current (VIN = 0 V, VDS = 500 V)10uA
VSDBody Diode Forward Voltage (VCC = VBS = 15V, VIN = 0 V, ID = -7 A)1.5V
RDS(ON)MOSFET On-Resistance (VCC = VBS = 15 V, VIN = 5 V, ID =0.5 A)1.1ohm
TONSwitching Time (Inductive Load L = 2.8 mH, VPN =400 V, VCC = VBS = 15 V, ID =7A, VIN = 0~5 V)960nsHigh side and low side MOSFET turn-on
TOFFSwitching Time (Inductive Load L = 2.8 mH, VPN =400 V, VCC = VBS = 15 V, ID =7A, VIN = 0~5 V)310nsHigh side and low side MOSFET turn-off
IQCCQuiescent VCC Supply Current (VCC = 15V, VIN = 0V)180uA
ISWIPM Operating VCC Supply Current (VCC=15V, VIN=15KHz)1.26mA
IQBQuiescent VBS Supply Current (VBS = 15V, VIN = 0V)50uA
VCC_ONVCC and VBS Rising Undervoltage Protection8.9V
VBS_ONVCC and VBS Rising Undervoltage Protection8.7V
VCC_UVLOVCC and VBS Falling Undervoltage Protection8.1V
VBS_UVLOVCC and VBS Falling Undervoltage Protection7.8V
VIHTurn-on Voltage Threshold (Logic High Level)2.9V
VILTurn-off Voltage Threshold (Logic Low Level)0.45V
VFBBootstrap Diode Forward Voltage (IF = 0.8A)1.65V
TRRBBootstrap Diode Reverse Recovery Time (IF = 0.5A)40ns

2402210951_LINKOSEMI-LKS1D5007DT_C20618099.pdf


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