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MMBT2222A NPN transistor offering performance for switching and amplification in electronic circuits

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MMBT2222A NPN transistor offering performance for switching and amplification in electronic circuits

Current - Collector Cutoff : 10nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 300MHz

type : NPN

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 300mW Surface Mount SOT-23

Mfr. Part # : MMBT2222A

Model Number : MMBT2222A

Package : SOT-23

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MMBT2222A NPN TRANSISTOR

The MMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A) and is marked with '1P'. This transistor is suitable for various electronic applications requiring amplification and switching.

Product Attributes

Marking Type: MMBT2222A
Marking Code: 1P
Complementary PNP Type: MMBT2907A

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCBO	CollectorBase Voltage	IC = 10uA, IE = 0			75	V
VCEO	CollectorEmitter Voltage	IC = 10 mA, IB = 0			40	V
VEBO	EmitterBase Voltage	IE = 10uA, IC = 0			6	V
IC	Collector Current Continuous				600	mA
PC	Collector Power Dissipation	(Ta=25 unless otherwise noted)			300	mW
RthJA	Thermal Resistance From Junction To Ambient			417	/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		+150
V(BR)CBO	Collector-base breakdown voltage	VCB = 60V, IE = 0	75			V
V(BR)CEO	Collector-emitter breakdown voltage	VCE = 40V, IB = 0	40			V
V(BR)EBO	Emitter-base breakdown voltage	VEB = 6V, IC =0	6			V
ICBO	Collector cut-off current	VCB = 60V, IE = 0			10	uA
ICEX	Collector cut-off current	VCE = 30V, BE(off) = -0.5V			0.01	uA
IEBO	Emitter cut-off current	VEB = 3V, IC =0			0.01	uA
hFE1	DC current gain	VCE = 10V, IC = 0.1mA	100
hFE2	DC current gain	VCE = 10V, IC = 150mA, IB = 15mA		300
hFE3	DC current gain	VCE = 10V, IC = 500mA, IB = 50mA		42
VCE(sat)	Collector-emitter saturation voltage	IC = 150mA, IB = 15mA		0.2	0.3	V
VBE(sat)	Base-emitter saturation voltage	IC = 150mA, IB = 15mA		0.9	1.2	V
fT	Transition frequency	VCE = 20V, IC = 20mA, f=100MHz		225		MHz
td	Delay time	VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA		10		ns
tr	Rise time	VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA		25		ns
ts	Storage time	VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA		60		ns
tf	Fall time	VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA		300		ns
Cib	Input capacitance	VCB = 10V, f=1MHz, IE=0		100		pF
Cob	Output capacitance	VEB = 3V, f=1MHz, IC=0		100		pF

2410121953_GOODWORK-MMBT2222A_C909758.pdf

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