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PNP small signal transistor GOODWORK MMBTA55 designed for amplification and switching applications

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PNP small signal transistor GOODWORK MMBTA55 designed for amplification and switching applications

Emitter-Base Voltage(Vebo) : 4V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 50MHz

type : PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 300mW Surface Mount SOT-23

Mfr. Part # : MMBTA55

Model Number : MMBTA55

Package : SOT-23

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Product Overview

The MMBTA55 / MMBTA56 are PNP small signal surface mount transistors featuring epitaxial planar die construction. They are ideal for low power amplification and switching applications. Complementary NPN types (MMBTA05 / MMBTA06) are also available.

Product Attributes

Brand: DEMACHEL
Package Type: SOT-23
Marking (MMBTA55): 2H
Marking (MMBTA56): 2GM

Technical Specifications

Characteristic	Symbol	MMBTA55	MMBTA56	Unit	Test Condition
Maximum Ratings
Collector-Base Voltage	VCBO	-60	-80	V	@TA = 25C unless otherwise specified
Collector-Emitter Voltage	VCEO	-60	-80	V	@TA = 25C unless otherwise specified
Emitter-Base Voltage	VEBO	-4.0		V	@TA = 25C unless otherwise specified
Collector Current - Continuous	IC	-500		mA	@TA = 25C unless otherwise specified
Power Dissipation	Pd	300		mW	@TA = 25C unless otherwise specified
Thermal Resistance, Junction to Ambient	RJA	417		C/W	@TA = 25C unless otherwise specified
Operating and Storage Temperature Range	Tj, TSTG	-55 to +150		C	@TA = 25C unless otherwise specified
Electrical Characteristics
Collector-Base Breakdown Voltage	V(BR)CBO	-60	-80	V	IC = -100A, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	-60	-80	V	IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	-4.0		V	IE = -100A, IC = 0
Collector Cutoff Current	ICBO	-100		nA	VCB = -60V, IE = 0 (MMBTA55); VCB = -80V, IE = 0 (MMBTA56)
Collector Cutoff Current	ICEX	-100		nA	VCE = -60V, IBO = 0V (MMBTA55); VCE = -80V, IBO = 0V (MMBTA56)
DC Current Gain	hFE	100			IC = -10mA, VCE = -1.0V
DC Current Gain	hFE				IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage	VCE(SAT)	-0.25		V	IC = -100mA, IB = -10mA
Base-Emitter Saturation Voltage	VBE(SAT)	-1.2		V	IC = -100mA, VCE = -1.0V
Current Gain-Bandwidth Product	fT	50		MHz	VCE = -1.0V, IC = -100mA, f = 100MHz

2504101957_GOODWORK-MMBTA55_C42417812.pdf

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