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Electronic Circuit NPN Transistor GOODWORK MMBT4401 with Collector Current Continuous 600 Milliamps

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Electronic Circuit NPN Transistor GOODWORK MMBT4401 with Collector Current Continuous 600 Milliamps

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 250MHz

type : NPN

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23

Mfr. Part # : MMBT4401

Model Number : MMBT4401

Package : SOT-23

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MMBT4401 NPN TRANSISTOR

The MMBT4401 is an NPN transistor designed for switching applications. It offers reliable performance with key electrical characteristics suitable for various electronic circuits.

Product Attributes

Marking Type number: MMBT4401
Marking code: 2X
Package: SOT-23

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCBO	CollectorBase Voltage				60	V
VCEO	CollectorEmitter Voltage				40	V
VEBO	EmitterBase Voltage				6	V
IC	Collector Current Continuous				600	mA
PC	Collector Power Dissipation				300	mW
RthJA	Thermal Resistance From Junction To Ambient			417	/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		+150
V(BR)CBO	Collector-base breakdown voltage	IC = 100uA, IE = 0	60			V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 1 mA, IB = 0	40			V
V(BR)EBO	Emitter-base breakdown voltage	IE = 100uA, IC = 0	6			V
ICBO	Collector cut-off current	VCB = 50V, IE = 0			0.1	uA
ICEX	Collector cut-off current	VCB = 50V, IE = 0			0.1	uA
IEBO	Emitter cut-off current	VEB = 5V, IC =0			0.1	uA
hFE1	DC current gain	VCE = 35V, V =0.4V EB	40
hFE2	DC current gain	VCE = 10V, IC = 20mA, f=100MHz		225
hFE3	DC current gain	VCE = 2V, IC = 500mA	40
hFE4	DC current gain	IC = 150mA, IB = 15mA		300
hFE5	DC current gain	IC = 500mA, IB = 50mA		600
VCE(sat)	Collector-emitter saturation voltage	IC = 150mA, IB = 15mA		0.4	0.75	V
VBE(sat)	Base-emitter saturation voltage	IC = 150mA, IB = 15mA		1.2		V
fT	Transition frequency	VCE = 30V,VBE(off)=-2V =150mA, C IC IB1=15mA		150		MHZ
td	Delay time	VCC = 30V, IC = 150mA IB1= 15mA		20		ns
tr	Rise time	IB2= 20		250		ns
ts	Storage time	IC = 500mA, IB = 50mA		0.1		s
tf	Fall time	VCE = 10V, IC = 20mA, f=100MHz		0.1		s
Cib	Capacitance	VCE = 1V, IC=1mA			10	pF
Cob	Capacitance	VCE = 1V, IC=0.1mA			10	pF

2410010232_GOODWORK-MMBT4401_C909762.pdf

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