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PNP transistor epitaxial planar die GOODWORK MMBT2907A engineered for electronic amplification switching

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PNP transistor epitaxial planar die GOODWORK MMBT2907A engineered for electronic amplification switching

Current - Collector Cutoff : 20nA

Pd - Power Dissipation : 250mW

Transition frequency(fT) : 200MHz

type : PNP

Current - Collector(Ic) : -

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 60V 200MHz 250mW Surface Mount SOT-23

Mfr. Part # : MMBT2907A

Model Number : MMBT2907A

Package : SOT-23

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MMBT2907A PNP TRANSISTOR

The MMBT2907A is an epitaxial planar die construction PNP transistor. It offers a complementary NPN type, the MMBT2222A. This transistor is suitable for various electronic applications requiring PNP amplification and switching capabilities.

Product Attributes

Marking Type number: MMBT2907A
Marking code: 2F
Complementary NPN Type: MMBT2222A

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
CollectorBase Voltage	VCBO				-60	V
CollectorEmitter Voltage	VCEO				-60	V
EmitterBase Voltage	VEBO				-5	V
Collector Current Continuous	IC				-600	mA
Total Device Dissipation	PD	(Ta=25)			250	mW
Thermal Resistance From Junction To Ambient	RthJA				500	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55~+150
Collector-base breakdown voltage	V(BR)CBO	IC =-10uA, IE = 0	-60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-10mA, IB = 0	-60			V
Emitter-base breakdown voltage	V(BR)EBO	IE =-10uA, IC = 0	-5			V
Collector cut-off current	ICBO	VCB =-50V, IE = 0			-10	nA
Base cut-off current	IEBO	VEB =-3V, IC = 0			-100	nA
DC current gain	hFE1	VC =-20V, IC =-50mA		300
DC current gain	hFE2	VCE =-30V, IC =-150mA			-50
DC current gain	hFE3	VCE =-30V, IC =-150mA,IB1 15mA		75
DC current gain	hFE4	IC =-500mA, IB =-50mA		50
DC current gain	hFE5	IC =-150mA, IB =-15mA		100
Collector-emitter saturation voltage	VCE(sat)	IC =-150mA, IB =-15mA		-1.3		V
Collector-emitter saturation voltage	VCE(sat)	IC =-500mA, IB =-50mA		-1.6		V
Base-emitter saturation voltage	VBE(sat)	VCE =-10V, IC =-150mA		-0.4		V
Base-emitter saturation voltage	VBE(sat)	VCE =-10V, IC =-0.1mA		-0.25		V
Transition frequency	fT	VCE =-50mA, IC f=100MHz			225	MHZ
Delay time	td	VCE =-30V, VBE=-0.5V		-2.6		ns
Rise time	tr				-50	ns
Storage time	ts				-100	ns
Fall time	tf				-77	ns
hFE RANK RANGE			100-300	200-300	100-200

2410121953_GOODWORK-MMBT2907A_C909759.pdf

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