The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability (10us). This product is ideal for inverter applications in motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings |
| Collector-Emitter Breakdown Voltage | VCE | | | | 1200 | V DC |
| Collector Current, limited by Tjmax | IC | TC= 25C | | | 20 | A |
| Collector Current, limited by Tjmax | IC | TC= 100C | | | 10 | A |
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | | | 20 | A |
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | | | 10 | A |
| Continuous Gate-Emitter Voltage | VGE | | | | 20 | V |
| Transient Gate-Emitter Voltage | VGE | | | | 30 | V |
| Turn off Safe Operating Area | | VCE1200V, Tj 150C | | | 40 | A |
| Pulsed Collector Current, VGE=15V, tp limited by Tjmax | ICM | | | | 40 | A |
| Diode Pulsed Current, tp limited by Tjmax | IFpuls | | | | 40 | A |
| Short Circuit Withstand Time, VGE= 15V, VCC=900VVCEM1200V | Tsc | | | | 10 | s |
| Power Dissipation , Tj=175C,Tc=25C | Ptot | | | | 157 | W |
| Electrical Characteristics of the IGBTTj= 25unless otherwise specified |
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 1200 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=500A | 5.0 | 5.8 | 6.6 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=10A | | | | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=25C | | 1.85 | | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=125C | | 2.15 | | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=150C | | 2.25 | 2.20 | V |
| Zero Gate Voltage Collector Current | ICES | VCE=1200V, VGE=0V | | | | mA |
| Zero Gate Voltage Collector Current | ICES | Tj= 25C | | 0.25 | | mA |
| Zero Gate Voltage Collector Current | ICES | Tj=150C | | 5.00 | | mA |
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | | | 400 | nA |
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | | 0.75 | | nF |
| Reverse Transfer Capacitance | Cres | | | 0.035 | | nF |
| Gate Charge | QG | VCC=960V,IC=10A, VGE=15V | | 0.08 | | uC |
| Short Circuit Collector Current | ISC | VGE=15V, tsc10us, Vcc=900V,Tj150C | | 50 | | A |
| Operating Junction Temperature | Tj | | -40 | | +175 | C |
| Storage Temperature | Ts | | -55 | | +150 | C |
| Soldering Temperature, wave soldering 1.6mm (0.063in.) from case for 10s | | | | | 260 | C |
| Electrical Characteristics of the DiodeTj= 25unless otherwise specified |
| Static Diode Forward Voltage | VF | IF= 10A | | | | V |
| Static Diode Forward Voltage | VF | Tj= 25C | | 2.0 | | V |
| Static Diode Forward Voltage | VF | Tj= 125C | | 2.1 | | V |
| Static Diode Forward Voltage | VF | Tj= 150C | | 2.1 | | V |
| Switching Characteristic, Inductive Load |
| Dynamic, at Tj= 25 |
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | | 85 | | ns |
| Rise Time | tr | | | 50 | | ns |
| Turn-on Energy | Eon | | | 0.98 | | mJ |
| Turn-off Delay Time | td(off) | | | 262 | | ns |
| Fall Time | tf | | | 140 | | ns |
| Turn-off Energy | Eoff | | | 0.48 | | mJ |
| Dynamic, at Tj= 125 |
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | | 90 | | ns |
| Rise Time | tr | | | 60 | | ns |
| Turn-on Energy | Eon | | | 1.33 | | mJ |
| Turn-off Delay Time | td(off) | | | 285 | | ns |
| Fall Time | tf | | | 150 | | ns |
| Turn-off Energy | Eoff | | | 0.9 | | mJ |
| Dynamic, at Tj= 150 |
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | | 95 | | ns |
| Rise Time | tr | | | 65 | | ns |
| Turn-on Energy | Eon | | | 1.68 | | mJ |
| Turn-off Delay Time | td(off) | | | 308 | | ns |
| Fall Time | tf | | | 160 | | ns |
| Turn-off Energy | Eoff | | | 1.05 | | mJ |
| Electrical Characteristics of the DIODE |
| Dynamic, at Tj= 25 |
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | | 12.5 | | A |
| Reverse Recovery Charge | Qrr | | | 0.9 | | uC |
| Reverse Recovery Energy | Erec | | | 0.25 | | mJ |
| Dynamic, at Tj= 125 |
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | | 14.4 | | A |
| Reverse Recovery Charge | Qrr | | | 1.7 | | uC |
| Reverse Recovery Energy | Erec | | | 0.5 | | mJ |
| Dynamic, at Tj= 150 |
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | | 15.3 | | A |
| Reverse Recovery Charge | Qrr | | | 2.0 | | uC |
| Reverse Recovery Energy | Erec | | | 0.58 | | mJ |
| Thermal Resistance |
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | | | | 0.95 | K/W |
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | | | | 1.70 | K/W |
| Thermal Resistance, Junction - Ambient | Rth(j-a) | | | | 40 | K/W |
