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High voltage IGBT SPTECH SPT40N120F1A1 1200V 40A TO247 package suitable for solar inverters and welding

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High voltage IGBT SPTECH SPT40N120F1A1 1200V 40A TO247 package suitable for solar inverters and welding

Td(off) : 230ns

Pd - Power Dissipation : 417W

Operating Temperature : -40℃~+150℃

Td(on) : 60ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Input Capacitance(Cies) : 4.4nF@25V

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5.1V@250uA

Gate Charge(Qg) : 270nC@15V

Reverse Recovery Time(trr) : 250ns

Switching Energy(Eoff) : 800uJ

Turn-On Energy (Eon) : 2.9mJ

Description : IGBT FS (Field Stop) 1.2kV 40A 417W Through Hole TO-247-3

Mfr. Part # : SPT40N120F1A1

Model Number : SPT40N120F1A1

Package : TO-247-3

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Product Overview

The SPT40N120F1A1 is a high-performance IGBT designed for demanding applications. It features a high breakdown voltage of 1200V and utilizes Trench-Stop Technology for enhanced speed, ruggedness, and short-circuit withstand capability. This product is ideal for use in Uninterruptible Power Supplies, solar inverters, welding equipment, and PFC applications.

Product Attributes

Brand: SPTECH
Product Package: TO247 Tube

Technical Specifications

Model	V_CE	I_C	V_CE(SAT) @ I_C=40A	Package
SPT40N120F1A1	1200 V	40 A	2.0 V	TO247

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Collector-Emitter Breakdown Voltage	V_CES	V_GE=0V , I_C=250A	1200	1300	-	V
Gate threshold voltage	V_GE(th)	V_GE=V_CE, I_C=250A	5.1	5.8	6.4	V
Collector-Emitter Saturation voltage	V_CE(sat)	V_GE=15V, I_C=40A, T_j = 25C	-	2.0	-	V
Collector-Emitter Saturation voltage	V_CE(sat)	V_GE=15V, I_C=40A, T_j = 150C	-	-	2.5	V
Zero gate voltage collector current	I_CES	V_CE = 1200V, V_GE = 0V, T_j = 25C	-	-	10	A
Zero gate voltage collector current	I_CES	V_CE = 1200V, V_GE = 0V, T_j = 150C	-	-	2500	A
Gate-emitter leakage current	I_GES	V_CE = 0V, V_GE = 20V	-	-	100	nA
Transconductance	g_fs	V_CE=20V, I_C=15A	-	15	-	S
Input capacitance	C_ies	V_CE = 25V, V_GE = 0V, f = 1MHz	-	4400	-	pF
Output capacitance	C_oes		-	180	-	pF
Reverse transfer capacitance	C_res		-	100	-	pF
Gate charge	Q_G	V_CC = 960V, I_C = 40A, V_GE = 15V	-	270	-	nC
Diode Forward Voltage	V_FM	I_F = 40A	-	2.6	-	V
Reverse Recovery Time	T_rr	I_F= 40A, V_R = 600V, di/dt= 400A/s	-	250	-	ns
Reverse Recovery Current	I_rr		-	15	-	A
Reverse Recovery Charge	Q_rr		-	600	-	nC

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Turn-on delay time	t_d(on)	V_CC = 600V, I_C = 40A, V_GE = 0/15V, R_g=12, T_j = 25C	-	60	-	ns
Rise time	t_r	V_CC = 600V, I_C = 40A, V_GE = 0/15V, R_g=12, T_j = 25C	-	27	-	ns
Turn-on energy	E_on	V_CC = 600V, I_C = 40A, V_GE = 0/15V, R_g=12, T_j = 25C	-	2.9	-	mJ
Turn-off delay time	t_d(off)	V_CC = 600V, I_C = 40A, V_GE = 0/15V, R_g=12, T_j = 25C	-	230	-	ns
Fall time	t_f	V_CC = 600V, I_C = 40A, V_GE = 0/15V, R_g=12, T_j = 25C	-	70	-	ns
Turn-off energy	E_off	V_CC = 600V, I_C = 40A, V_GE = 0/15V, R_g=12, T_j = 25C	-	0.8	-	mJ

2411081743_SPTECH-SPT40N120F1A1_C480183.pdf

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